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184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 128mb ddr sdram module unbuffered 184pin dimm (16mx64 based on 16mx16 ddr sdram) 64-bit non-ecc/parity revision 0.9 june. 2001
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 revision history revision 0 (aug 1998) 1. first release for internal usage revision 0.1 (may. 1999) 1. changed die revision from b-die to c-die 2. changed dc/ac characteristics item from old version . revision 0.2 (aug. 1999) 1. changed die revision from c-die to b-die 2. modified binning policy from to -z (133mhz) -z (133mhz/266mbps@cl=2) -8 (125mhz) -y (133mhz/266mbps@cl=2.5) -0 (100mhz) -0 (100mhz/200mbps@cl=2) 3.modified the following ac spec values *1 : changed description method for the same functionality. this means no difference from the previous version. 4.changed the following ac parameter symbol from tdqck to tac output data access time from ck/ ck revision 0.3 (sept. 1999) 1. changed the odering information. 1-1. exclude km mark. from to kmm368... m368..... 1-2. pcb revison from to - blank: 1st generation - 0: 1st gernation - a : 2nd generation - 1: 2nd generation - b : 2nd generation - 2: 3nd generation example:kmm368l914bt m368l1624bt0 1-3. modified binning policy from to - 0 (100mhz/200mbps@cl=2) - a0 (100mhz/200mbps@cl=2) - z (133mhz/266mbps@cl=2) - a2 (133mhz/266mbps@cl=2) - y (133mhz/266mbps@cl=2.5) - b0 (133mhz/266mbps@cl=2.5) from. to. -z -0 -z -y -0 tac +/- 0.75ns +/- 1ns +/- 0.75ns +/- 0.75ns +/- 0.8ns tdqsck +/- 0.75ns +/- 1ns +/- 0.75ns +/- 0.75ns +/- 0.8ns tdqsq +/- 0.5ns +/- 0.75ns +/- 0.5ns +/- 0.5ns +/- 0.6ns tds/tdh 0.5 ns 0.75 ns 0.5 ns 0.5 ns 0.6 ns tcdlr *1 2.5tck-tdqss 2.5tck-tdqss 1tck 1tck 1tck tpre *1 1tck +/- 0.75ns 1tck +/- 1ns 0.9/1.1 tck 0.9/1.1 tck 0.9/1.1 tck trpst *1 tck/2 +/- 0.75ns tck/2 +/- 1ns 0.4/0.6 tck 0.4/0.6 tck 0.4/0.6 tck thzq *1 tck/2 +/- 0.75ns tck/2 +/- 1ns +/- 0.75ns +/- 0.75ns +/-0.8ns
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 revision 0.4 (december. 1999) 1. changed from 3.3v to 2.5v in vddspd power. revision 0.5 (april. 2000) < page 3 > 1. changed from 1450mil to 1250mil in pcb height. 2. changed pin 90 from wp to nc in pin configuration table. 3. changed in pin configuration table as followings. pin 16 : ck0 -> ck1 pin 17 : ck0 -> /ck1 pin 137 : ck1 -> ck0 pin 138 : ck1 -> /ck0 4. removed wp in pin description. < page 4> 5. changed clock wiring as followings. ck0 / ck0 2sdrams -> nc ck1 / ck1 nc -> 2 sdrams 6. changed bypassing to reflect common vdd/vddq plane. 7. added a13, ba1. 8. removed wp from serial pd. < page 5> 9. changed power & dc operating condition. < page 6 > 10. added overshoot/undershoot spec . vih(max) = 4.2v, the overshoot voltage duration is 3ns at vdd. . vil(min) =- 1.5v, the overshoot voltage duration is 3ns at vss. < page 6,7 > 11. changed ac operating conditions as follows. parameter symbol from to min max min max i/o reference voltage v ref 1.15 1.35 0.49*vddq 0.51*vddq input logic high voltage v ih (dc) v ref +0.18 v ddq +0.3 v ref +0.15 v ddq +0.3 input logic low voltage v il (dc) -0.3 v ref -0.18 -0.3 v ref -0.15 input leakage current i i -5 5 -2 2 output high current (v out = 1.95v) i oh -15.2 -16.8 output low current (v out = 0.35v) i ol 15.2 16.8 parameter/condition symbol from to min max min max input high (logic 1) voltage, dq, dqs and dm signals vih(ac) vref + 0.35 vref + 0.31 input low (logic 0) voltage, dq, dqs and dm signals. vil(ac) vref - 0.35 vref - 0.31 input differential voltage, ck and ck inputs vid(ac) 0.7 vddq+0.6 0.62 vddq+0.6
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 < page 7 > 12. changed input/output capacitance as follows. < page 8, 9> 13. changed ac parameters as follows. 14. added ac parameters as follows < page 12> 15. changed from 1450mil to 1250mil in package dimension. revision 0.6 (june. 2000) 1. changed pcb version from t0 to t1. parameter symbol from to min max min max input capacitance(a 0 ~ a 11 , ba 0 ~ ba 1 , ras , cas , we ) c in1 - 50 29 34 input capacitance(cke 0 ) c in2 - 35 29 34 input capacitance( cs 0 ) c in3 - 32 26 30 input capacitance( clk 1 , clk 2 ) c in4 - 42 30 32 data & dqs input/output capacitance(dq 0 ~dq 63 ) c out - 16 8 9 input capacitance(dm 0 ~dm 8 ) c in5 - 16 8 9 parameter from to comments tdqsq +/- 0.5(pc266), +/- 0.6(pc200) +0.5(pc266), +0.6(pc200) tdv +/- 0.35tck - removed parameter symbol -a2(pc266@cl=2) -b0(pc266@cl=2.5) -a0(pc200@cl=2) min max min max min max output dqs valid window tqh thpmin -0.75ns - thpmin -0.75ns - thpmin -1.0ns - clock half period thp tclmin or tchmin - tclmin or tchmin - tclmin or tchmin - qfc setup to first dqs edge on reads tqcs 0.9 1.1 0.9 1.1 0.9 1.1 qfc hold after last dqs edge on reads tdqch 0.4 0.6 0.4 0.6 0.4 0.6 write command to qfc delay on write tqcsw 4.0 4.0 4.0 write burst end to qfc delay on write tqchw 1.25ns 0.5tck 1.25ns 0.5tck 1.25ns 0.5tck write burst end to qfc delay on write interrupted by precharge tqchwi 1.25ns 1.5tck 1.25ns 1.5tck 1.25ns 1.5tck
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 revision 0.7 (october. 2000) 1.added dc target spec values. 2.deleted tdal in ac parameter x. revision 0.8 (november. 2000) 1.changed component placement on module pcb in package dimesions. revision 0.9 (june. 2001) 1. changed module current speificaton 2. changed typo size on module pcb in package dimesions. (from 2.6mm to 3mm). 3. changed ac parameter table.
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 general description pin description * these pins are not used in this module. pin name function a0 ~ a1 2 address input (multiplexed) ba0 ~ ba1 bank select address dq0 ~ dq63 data input/output dqs0 ~ dqs7 data strobe input/output ck 1 , ck1 , ck2, ck2 clock input cke0 clock enable input cs0 chip select input ras row address strobe cas column address strobe we write enable dm0 ~ dm7 data - in mask vdd power supply (2.5v) vddq power supply for dqs(2.5v) vss ground vref power supply for reference v ddspd serial eeprom power supply ( 2.3v to 3.6v ) sda serial data i/o scl serial clock sa0 ~ 2 address in eeprom vddid vdd identification flag nc no connection pin configurations (front side/back side) pin front pin front pin front pin back pin back pin back 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 vref dq0 vss dq1 dqs0 dq2 vdd dq3 nc nc vss dq8 dq9 dqs1 vddq ck 1 /ck 1 vss dq10 dq11 cke0 vddq dq16 dq17 dqs2 vss a9 dq18 a7 vddq dq19 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 a5 dq24 vss dq25 dqs3 a4 vdd dq26 dq27 a2 vss a1 *cb0 *cb1 vdd *dqs8 a0 *cb2 vss *cb3 ba1 dq32 vddq dq33 dqs4 dq34 vss ba0 dq35 dq40 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 vddq /we dq41 /cas vss dqs5 dq42 dq43 vdd */cs2 dq48 dq49 vss /ck2 ck2 vddq dqs6 dq50 dq51 vss vddid dq56 dq57 vdd dqs7 dq58 dq59 vss nc sda scl 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 vss dq4 dq5 vddq dm0 dq6 dq7 vss nc nc *a13 vddq dq12 dq13 dm1 vdd dq14 dq15 cke1 vddq *ba2 dq20 a12 vss dq21 a11 dm2 vdd dq22 a8 dq23 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 vss a6 dq28 dq29 vddq dm3 a3 dq30 vss dq31 *cb4 *cb5 vddq *ck 0 */ck 0 vss *dm8 a10 *cb6 vddq *cb7 vss dq36 dq37 vdd dm4 dq38 dq39 vss dq44 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 /ras dq45 vddq /cs0 * /cs1 dm5 vss dq46 dq47 */cs3 vddq dq52 dq53 nc vdd dm6 dq54 dq55 vddq nc dq60 dq61 vss dm7 dq62 dq63 vddq sa0 sa1 sa2 v ddspd samsung electronics co., ltd. reserves the right to change products and specifications without notice. key key M368L1624BT1 ddr sdram 184pin dimm 8mx64 ddr sdram 184pin dimm based on 16mx16 the samsung M368L1624BT1 is 8m bit x 64 double data rate sdram high density memory modules based on first gen of 256 mb ddr sdram respectively. the samsung M368L1624BT1 consists of four cmos 8m x 16 bit with 4banks double data rate sdrams in 66pin tsop- ii(400mil) packages mounted on a 184pin glass-epoxy sub- strate. four 0.1uf decoupling capacitors are mounted on the printed circuit board in parallel for each ddr sdram. the M368L1624BT1 is dual in-line memory modules and intended for mounting into 184pin edge connector sockets. synchronous design allows precise cycle control with the use of system clock. data i/o transactions are possible on both edges of dqs. range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory sys- tem applications. ? p erformance range ? power supply : vdd: 2.5v 0.2v, vddq: 2.5v 0.2v ? double-data-rate architecture; two data transfers per clock cycle ? bidirectional data strobe(dqs) ? differential clock inputs(ck and ck ) ? dll aligns dq and dqs transition with ck transition ? programmable read latency 2, 2.5 (clock) ? programmable burst length (2, 4, 8) ? programmable burst type (sequential & interleave) ? edge aligned data output, center aligned data input ? auto & self refresh, 7.8us refresh interval(8k/64ms refresh) ? serial presence detect with eeprom ? pcb : height 1250 (mil) , double sided component part no. max freq. interface M368L1624BT1-c(l)a2 133mhz(7.5ns@cl=2) sstl_2 M368L1624BT1-c(l)b0 133mhz(7.5ns@cl=2.5) M368L1624BT1-c(l)a0 100mhz(10ns@cl=2) feature
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 functional block diagram dq8 dq9 dq10 dq11 ldm i/o 6 i/o 4 i/o 1 i/o 3 d0 dq12 dq13 dq14 dq15 i/o 2 i/o 0 i/o 5 i/o 7 udm i/o 8 i/o 10 i/o 15 i/o 13 i/o 12 i/o 14 i/o 11 i/o 9 dq1 dq2 dq3 dq4 dq5 dq6 dq7 dq0 dq24 dq25 dq26 dq27 ldqs i/o 6 i/o 4 i/o 1 i/o 3 d1 dq28 dq29 dq30 dq31 i/o 2 i/o 0 i/o 5 i/o 7 dq16 dq17 dq18 dq19 dq20 dq21 dq22 dq23 i/o 8 i/o 10 i/o 15 i/o 13 i/o 12 i/o 14 i/o 11 i/o 9 dq56 dq57 dq58 dq59 i/o 6 i/o 4 i/o 1 i/o 3 d3 dq60 dq61 dq62 dq63 i/o 2 i/o 0 i/o 5 i/o 7 dq48 dq49 dq50 dq51 dq52 dq53 dq54 dq55 dq40 dq41 dq42 dq43 i/o 6 i/o 4 i/o 1 i/o 3 d2 dq44 dq45 dq46 dq47 i/o 2 i/o 0 i/o 5 i/o 7 i/o 8 i/o 10 i/o 15 i/o 13 i/o 12 i/o 14 i/o 11 i/o 9 dq33 dq34 dq35 dq36 dq37 dq38 dq39 dq32 i/o 8 i/o 10 i/o 15 i/o 13 i/o 12 i/o 14 i/o 11 i/o 9 dm1 cs cs cs cs ldqs dqs1 dm0 dqs0 dm3 dqs3 dm2 dqs2 dm5 dqs5 dm4 dqs4 dm6 dqs6 dm7 dqs7 udqs ldm udm udqs ldm udm ldqs udqs a0 - a13 a0-a13: ddr sdrams d0 - d3 ba0 - ba1 ba0-ba1: ddr sdrams d0 - d3 ras ras : sdrams d0 - d3 cas cas : sdrams d0 - d3 cke0 cke: sdrams d0 - d3 we we : sdrams d0 - d3 udm udqs ldm ldqs clock wiring ck0/ ck0 clock input sdrams ck1/ ck1 nc 2 sdrams 2 sdrams ck2/ ck2 notes: 1. dq-to-i/o wiring is shown as recom- mended but may be changed. 2. dq/dqs/dm/cke/ cs relationships must be maintained as shown. 3. dq, dqs, dm/dqs resistors: 22 ohms. 4. vddid strap connections (for memory device vdd, vddq): strap out (open): vdd = vddq strap in (vss): vdd 1 vddq. cs0 cap will replace dram3 *if two drams are loaded, *clock net wiring card edge dram1 cap cap dram5 cap r=120 w cap a0 serial pd a1 a2 sa0 sa1 sa2 scl sda wp v ss d0 - d3 d0 - d3 v dd /v ddq d0 - d3 d0 - d3 vref v ddid strap: see note 4 v ddspd spd
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 absolute maximum ratings parameter symbol value unit voltage on any pin relative to vss v in , v out -0.5 ~ 3.6 v voltage on v dd supply relative to vss v dd -1.0 ~ 3 .6 v voltage on v ddq supply relative to vss v ddq -0.5 ~ 3.6 v storage temperature t stg -55 ~ +150 c power dissipation p d 4 w short circuit current i os 50 ma permanent device damage may occur if absolute maximum ratings are exceeded. functional operation should be restricted to recommended operating condition. exposure to higher than recommended voltage for extended periods of time could affect device reliability. note : power & dc operating conditions (sstl_2 in/out) notes 1. includes 25mv margin for dc offset on v ref , and a combined total of 50mv margin for all ac noise and dc offset on v ref , bandwidth limited to 20mhz. the dram must accommodate dram current spikes on v ref and internal dram noise coupled to v ref , both of which may result in v ref noise. v ref should be de-coupled with an inductance of 3nh. 2.v tt is not applied directly to the device. v tt is a system supply for signal termination resistors, is expected to be set equal to v ref , and must track variations in the dc level of v ref 3. v id is the magnitude of the difference between the input level on ck and the input level on ck . 4. these parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation. the ac and dc input specifications are relative to a vref envelop that has been bandwidth limited to 200mhz. 5. the value of v ix is expected to equal 0.5*v ddq of the transmitting device and must track variations in the dc level of the same. 6. these charactericteristics obey the sstl-2 class ii standards. recommended operating conditions(voltage referenced to v ss =0v, t a =0 to 70 c) parameter symbol min max unit note supply voltage(for device with a nominal v dd of 2.5v) v dd 2.3 2.7 i/o supply voltage v ddq 2.3 2.7 v i/o reference voltage v ref vddq/2-50mv vddq/2+50mv v 1 i/o termination voltage(system) v tt v ref -0.04 v ref +0.04 v 2 input logic high voltage v ih (dc) v ref +0.15 v ddq +0.3 v 4 input logic low voltage v il (dc) -0.3 v ref -0.15 v 4 input voltage level, ck and ck inputs v in (dc) -0.3 v ddq +0.3 v input differential voltage, ck and ck inputs v id (dc) 0.3 v ddq +0.6 v 3 input crossing point voltage, ck and ck inputs v ix (dc) 1.15 1.35 v 5 input leakage current i i -2 2 ua output leakage current i oz -5 5 ua output high current(normal strengh driver) ;v out = v tt + 0.84v i oh -16.8 ma output high current(normal strengh driver) ;v out = v tt - 0.84v i ol 16.8 ma output high current(half strengh driver) ;v out = v tt + 0.45v i oh -9 ma output high current(half strengh driver) ;v out = v tt - 0.45v i ol 9 ma
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 recommended operating conditions unless otherwise noted, t a =0 to 70 c ) typical case: vdd = 2.5v, t = 25?c worst case : vdd = 2.7v, t = 10?c conditions symbol typical worst operating current - one bank active-precharge; trc=trcmin;tck=100mhz for ddr200, 133mhz for ddr266a & ddr266b; dq,dm and dqs inputs changing twice per clock cycle; address and control inputs changing once per clock cycle idd0 - - operating current - one bank operation ; one bank open, bl=4, reads - refer to the following page for detailed test condition idd1 - - percharge power-down standby current; all banks idle; power - down mode; cke = =vih(min);all banks idle; cke > = vih(min); tck=100mhz for ddr200, 133mhz for ddr266a & ddr266b; address and other control inputs changing once per clock cycle; vin = vref for dq,dqs and dm idd2f - - precharge quiet standby current; cs# > = vih(min); all banks idle; cke > = vih(min); tck = 100mhz for ddr200, 133mhz for ddr266a & ddr266b; address and other control inputs stable with keeping >= vih(min) or == vih(min); cke>=vih(min); one bank active; active - precharge; trc=trasmax; tck = 100mhz for ddr200, 133mhz for ddr266a & ddr266b; dq, dqs and dm inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle idd3n - - operating current - burst read; burst length = 2; reads; continguous burst; one bank active; address and control inputs changing once per clock cycle; cl=2 at tck = 100mhz for ddr200, cl=2 at tck = 133mhz for ddr266a, cl=2.5 at tck = 133mhz for ddr266b ; 50% of data changing at every burst; lout = 0 m a idd4r - - operating current - burst write; burst length = 2; writes; continuous burst; one bank active address and control inputs changing once per clock cycle; cl=2 at tck = 100mhz for ddr200, cl=2 at tck = 133mhz for ddr266a, cl=2.5 at tck = 133mhz for ddr266b ; dq, dm and dqs inputs changing twice per clock cycle, 50% of input data changing at every burst idd4w - - auto refresh current; trc = trfc(min) - 8*tck for ddr200 at 100mhz, 10*tck for ddr266a & ddr266b at 133mhz; distributed refresh idd5 - - self refresh current; cke =< 0.2v; external clock should be on; tck = 100mhz for ddr200, 133mhz for ddr266a & ddr266b idd6 - - orerating current - four bank operation ; four bank interleaving with bl=4 -refer to the following page for detailed test condition idd7a - - ddr sdram spec items and test conditions
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 ddr sdram module i dd spec table * module i dd was calculated on the basis of component i dd and can be differently measured according to dq loading cap. symbol a2(ddr266@cl=2) b0(ddr266@cl=2.5) a0(ddr200@cl=2) unit notes typical worst typical worst typical worst idd0 400 460 400 460 360 420 ma idd1 540 620 540 620 500 580 ma idd2p 100 120 100 120 80 100 ma idd2f 160 200 160 200 140 160 ma idd2q 140 160 140 160 120 140 ma idd3p 160 180 160 180 140 160 ma idd3n 220 260 220 260 180 200 ma idd4r 860 1020 860 1020 720 860 ma idd4w 1060 1240 1060 1240 820 960 ma idd5 740 860 740 860 700 780 ma idd6 normal 12 12 12 12 12 12 ma low power 6 6 6 6 6 6 ma optional idd7a 1480 1720 1480 1720 1240 1460 ma < detailed test conditions for ddr sdram idd1 & idd7a > idd1 : operating current: one bank operation 1. typical case : vdd = 2.5v, t=25? c 2. worst case : vdd = 2.7v, t= 10? c 3. only one bank is accessed with trc(min), burst mode, address and control inputs on nop edge are changing once per clock cycle. lout = 0ma 4. timing patterns - ddr200(100mhz, cl=2) : tck = 10ns, cl2, bl=4, trcd = 2*tck, tras = 5*tck read : a0 n r0 n n p0 n a0 n - repeat the same timing with random address changing *50% of data changing at every burst - ddr266b(133mhz, cl=2.5) : tck = 7.5ns, cl=2.5, bl=4, trcd = 3*tck, trc = 9*tck, tras = 5*tck read : a0 n n r0 n p0 n n n a0 n - repeat the same timing with random address changing *50% of data changing at every burst - ddr266a (133mhz, cl=2) : tck = 7.5ns, cl=2, bl=4, trcd = 3*tck, trc = 9*tck, tras = 5*tck read : a0 n n r0 n p0 n n n a0 n - repeat the same timing with random address changing *50% of data changing at every burst legend : a=activate, r=read, w=write, p=precharge, n=nop
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 i dd7a : operating current: four bank operation 1. typical case : vdd = 2.5v, t=25? c 2. worst case : vdd = 2.7v, t= 10? c 3. four banks are being interleaved with trc(min), burst mode, address and control inputs on nop edge are not changing. lout = 0ma 4. timing patterns - ddr200(100mhz, cl=2) : tck = 10ns, cl2, bl=4, trrd = 2*tck, trcd= 3*tck, read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 a0 r3 a1 r0 - repeat the same timing with random address changing *100% of data changing at every burst - ddr266b(133mhz, cl=2.5) : tck = 7.5ns, cl=2.5, bl=4, trrd = 2*tck, trcd = 3*tck read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 n r3 a0 n a1 r0 - repeat the same timing with random address changing *100% of data changing at every burst - ddr266a (133mhz, cl=2) : tck = 7.5ns, cl2=2, bl=4, trrd = 2*tck, trcd = 3*tck read : a0 n a1 r0 a2 r1 a3 r2 n r3 a0 n a1 r0 - repeat the same timing with random address changing *100% of data changing at every burst legend : a=activate, r=read, w=write, p=precharge, n=nop ac operating conditions parameter/condition symbol min max unit note input high (logic 1) voltage, dq, dqs and dm signals vih(ac) vref + 0.31 v 3 input low (logic 0) voltage, dq, dqs and dm signals. vil(ac) vref - 0.31 v 3 input differential voltage, ck and ck inputs vid(ac) 0.7 vddq+0.6 v 1 input crossing point voltage, ck and ck inputs vix(ac) 0.5*vddq-0.2 0.5*vddq+0.2 v 2 note 1. vid is the magnitude of the difference between the input level on ck and the input on ck . 2. the value of v ix is expected to equal 0.5*v ddq of the transmitting device and must track variations in the dc level of the same. 3. these parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in simula - tion. the ac and dc input specificatims are refation to a vref envelope that has been bandwidth limited 20mhz.
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 output load circuit (sstl_2) output z0=50 w c load =30pf v ref =0.5*v ddq r t =50 w v tt =0.5*v ddq input/output capacitance (v dd = 2 . 5 v, v ddq =2.5v, t a = 25 c , f=1mhz) parameter symbol min max unit input capacitance(a 0 ~ a 1 2 , ba 0 ~ ba 1 , ras , cas , we ) c in1 29 34 pf input capacitance(cke 0 ) c in2 29 34 pf input capacitance( cs 0 ) c in3 26 30 pf input capacitance( clk 1 , clk 2 ) c in4 30 32 pf data & dqs input/output capacitance(dq 0 ~dq 63 ) c out 8 9 pf input capacitance(dm 0 ~dm 8 ) c in5 8 9 pf ac operating test conditions (v dd = 2 . 5 v, v ddq =2.5v, t a = 0 to 70 c ) parameter value unit note input reference voltage for clock 0.5 * v ddq v input signal maximum peak swing 1.5 v input levels(v ih /v il ) v ref +0.3 1 /v ref -0.3 1 v input timing measurement reference level v ref v output timing measurement reference level v tt v output load condition see load circuit
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 ac timming parameters & specifications (these ac charicteristics were tested on the component) parameter symbol -tca2(ddr266a) -tcb0(ddr266b) -tca0 (ddr200) unit note min max min max min max row cycle time trc 65 65 70 ns refresh row cycle time trfc 75 75 80 ns row active time tras 45 120k 45 120k 48 120k ns ras to cas delay trcd 20 20 20 ns row precharge time trp 20 20 20 ns row active to row active delay trrd 15 15 15 ns write recovery time twr 2 2 2 tck last data in to read command tcdlr 1 1 1 tck col. address to col. address delay tccd 1 1 1 tck clock cycle time cl=2.0 tck 7.5 12 10 12 10 12 ns 5 cl=2.5 7.5 12 7.5 12 12 ns 5 clock high level width tch 0.45 0.55 0.45 0.55 0.45 0.55 tck clock low level width tcl 0.45 0.55 0.45 0.55 0.45 0.55 tck dqs-out access time from ck/ ck tdqsck -0.75 +0.75 -0.75 +0.75 -0.8 +0.8 ns output data access time from ck/ ck tac -0.75 +0.75 -0.75 +0.75 -0.8 +0.8 ns data strobe edge to ouput data edge tdqsq - +0.5 - +0.5 - +0.6 ns 5 read preamble trpre 0.9 1.1 0.9 1.1 0.9 1.1 tck read postamble trpst 0.4 0.6 0.4 0.6 0.4 0.6 tck ck to valid dqs-in tdqss 0.75 1.25 0.75 1.25 0.75 1.25 tck dqs-in setup time twpres 0 0 0 ns 2 dqs-in hold time twpreh 0.25 0.25 0.25 tck dqs falling edge to ck rising-setup time tdss 0.2 0.2 0.2 tck dqs falling edge from ck rising-hold time tdsh 0.2 0.2 0.2 tck dqs-in high level width tdqsh 0.35 0.35 0.35 tck dqs-in low level width tdqsl 0.35 0.35 0.35 tck dqs-in cycle time tdsc 0.9 1.1 0.9 1.1 0.9 1.1 tck address and control input setup time tis 0.9 0.9 1.1 ns 6 address and control input hold time tih 0.9 0.9 1.1 ns 6 data-out high impedence time from ck/ ck thz tacmin - 400ps tacmax - 400ps tacmin - 400ps tacmax - 400ps tacmin - 400ps tacmax - 400ps ps data-out low impedence time from ck/ ck tlz tacmin - 400ps tacmax - 400ps tacmin - 400ps tacmax - 400ps tacmin - 400ps tacmax - 400ps ps input slew rate(for input only pins) tsl(i) 0.5 0.5 0.5 v/ns 6 input slew rate(for i/o pins) tsl(io) 0.5 0.5 0.5 v/ns 7 output slew rate(x4,x8) tsl(o) 1.0 4.5 1.0 4.5 1.0 4.5 v/ns 10 output slew rate(x16) tsl (o) 0.7 5 0.7 5 0.7 5 v/ns 10 output slew rate matching ratio(rise to fall) t slmr 0.67 1.5 0.67 1.5 0.67 1.5
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 note : 1. maximum burst refresh of 8 2. the specific requirement is that dqs be valid(high or low) on or before this ck edge. the case shown(dqs going f rom high_z to logic low) applies when no writes were previously in progress on the bus. if a previous write was in progress, dqs could be high at this time, depending on tdqss. 3. the maximum limit for this parameter is not a device limit. the device will operate with a great value for this parameter, but system performance (bus turnaround) will degrade accordingly. 4. a write command can be applied with t rcd satisfied after this command. 5. for registered dinns, t cl and t ch are 3 45% of the period including both the half period jitter (t jit(hp) ) of the pll and the half period jitter due to crosstalk (t jit (crosstalk) ) on the dimm. parameter symbol -tca2(ddr266a) -tcb0(ddr266b) -tca0 (ddr200) unit note min max min max min max mode register set cycle time tmrd 15 15 16 ns dq & dm setup time to dqs tds 0.5 0.5 0.6 ns 7,8,9 dq & dm hold time to dqs tdh 0.5 0.5 0.6 ns 7,8,9 dq & dm input pulse width tdipw 1.75 1.75 2 ns power down exit time tpdex 10 10 10 ns exit self refresh to write command txsw 95 116 ns exit self refresh to bank active command txsa 75 75 80 ns 4 exit self refresh to read command txsr 200 200 200 cycle refresh interval time 64mb, 128mb tref 15.6 15.6 15.6 us 1 256mb 7.8 7.8 7.8 us 1 output dqs valid window tqh thpmin -tqhs - thpmin -tqhs - thpmin -tqhs - ns 5 clock half period thp tclmin or tchmin - tclmin or tchmin - tclmin or tchmin - ns data hold skew factor tqhs 0.75 0.75 0.8 ns dqs write postamble time twpst 0.25 0.25 0.25 tck 3
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 6. input setup/hold slew rate derating this derating table is used to increase t is /t ih in the case where the input slew rate is below 0.5v/ns. input setup/hold slew rate based on the lesser of ac-ac slew rate and dc-dc slew rate. 7. i/o setup/hold slew rate derating this derating table is used to increase t ds /t dh in the case where the i/o slew rate is below 0.5v/ns. i/o setup/hold slew rate based on the lesser of ac-ac slew rate and dc-dc slew rate. 8. i/o setup/hold plateau derating this derating table is used to increase tds/tdh in the case where the input level is flat below vref 310mv for a duration of up to 2ns. 9. i/o delta rise/fall rate(1/slew-rate) derating this derating table is used to increase t ds /t dh in the case where the dq and dqs slew rates differ. the delta rise/fall rate is calated as 1/slewrate1-1/slewrate2. for example, if slew rate 1 = 5v/ns and slew rate 2 =.4v/ns then the delta rise/fall rate =-0/5ns/v. input s/h slew rate based on larger of ac-ac delta rise/fall rate and dc-dc delta rise/fall rate. 10. this parameter is fir system simulation purpose. it is guranteed by design. input setup/hold slew rate d tis d tih (v/ns) (ps) (ps) 0.5 0 0 0.4 +50 +50 0.3 +100 +100 i/o setup/hold slew rate d tds d tdh (v/ns) (ps) (ps) 0.5 0 0 0.4 +75 +75 0.3 +150 +150 i/o input level d tds d tdh (mv) (ps) (ps) 280 +50 +50 delta rise/fall rate d tds d tdh (ns/v) (ps) (ps) 0 0 0 0.25 +50 +50 0.5 +100 +100
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 command truth table (v=valid, x=don t care, h=logic high, l=logic low) command cken-1 cken cs ras cas we ba 0,1 a 10 /ap a 11 ,a 12 a 9 ~ a 0 note register extended mrs h x l l l l op code 1, 2 register mode register set h x l l l l op code 1, 2 refresh auto refresh h h l l l h x 3 self refresh entry l 3 exit l h l h h h x 3 h x x x 3 bank active & row addr. h x l l h h v row address read & column address auto precharge disable h x l h l h v l column address (a 0 ~a 8 ) 4 auto precharge enable h 4 write & column address auto precharge disable h x l h l l v l column address (a 0 ~a 8 ) 4 auto precharge enable h 4, 6 burst stop h x l h h l x 7 precharge bank selection h x l l h l v l x all banks x h 5 active power down entry h l h x x x x l v v v exit l h x x x x precharge power down mode entry h l h x x x x l h h h exit l h h x x x l v v v dm h x x 8 no op eration (nop) : not defined h x h x x x x 9 l h h h 9 note : 1. op code : operand code. a 0 ~ a 12 & ba 0 ~ ba 1 : program keys. (@emrs/mrs) 2. emrs/ mrs can be issued only at all banks precharge state. a new command can be issued 2 clock cycles after emrs or mrs. 3. auto refresh functions are same as the cbr refresh of dram. the automatical precharge without row precharge command is meant by "auto". auto/self refresh can be issued only at all banks precharge state. 4. ba 0 ~ ba 1 : bank select addresses. if both ba 0 and ba 1 are "low" at read, write, row active and precharge, bank a is selected. if both ba 0 is "high" and ba 1 is "low" at read, write, row active and precharge, bank b is selected. if both ba 0 is "low" and ba 1 is "high" at read, write, row active and precharge, bank c is selected. if both ba 0 and ba 1 are "high" at read, write, row active and precharge, bank d is selected. 5. if a 10 /ap is "high" at row precharge, ba 0 and ba 1 are ignored and all banks are selected. 6. during burst write with auto precharge, new read/write command can not be issued. another bank read/write command can be issued after the end of burst. new row active of the associated bank can be issued at t rp after the end of burst. 7. burst stop command is valid at every burst length. 8. dm sampled at the rising and falling edges of the dqs and data-in are masked at the both edges (write dm latency is 0). 9. this combination is not defined for any function, which means "no operation(nop)" in ddr sdram.
184pin unbuffered ddr sdram module M368L1624BT1 rev. 0.9 june. 2001 tolerances : 0.005(.13) unless otherwise specified. the used device is 8mx16 sdram, tsop. sdram part no : k4h281638b-tc package dimensions 5.25 0.006 5.077 units : inches (millimeters) 0.050 0.0078 0.006 (0.20 0.15) 0 . 1 0 0 m i n ( 2 . 3 0 m i n ) 0 . 3 9 3 ( 1 0 . 0 0 ) (1.270 ) 0 . 1 0 0 ( 2 . 5 0 ) detail b a b (128.950) (133.350 0.15 ) 0.250 (6.350 ) detail a 0.157 (4.00 ) 0.071 (1.8 0) 0.039 0.002 (1.000 0. 050) (3.80) 2.175 (6.62) (64.77) (49.53) ( 1 7 . 8 0 ) 2.55 1.95 0.26 2.500 0 . 7 0.10 m c b a 0.10 m c a 0.1496 (3.00) 0.118 r (2.00) 0.0787 (4.00) 0.1575 1.25 0.006 (31.75 0.15) ( 4 . 0 0 ) ( 2 x ) 0 . 1 5 7 0.098 max 0.050 0.0039 (1.270 0.10) (2.47 max) m b (3.00) 0.118

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